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Titolo:
High-pressure plasma CVD for high-quality amorphous silicon
Autore:
Isomura, M; Kondo, M; Matsuda, A;
Indirizzi:
Thin Silicon Solar Cells Super Lab, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Thin Silicon Solar Cells Super Lab Tsukuba Ibaraki Japan 3058568 8, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 66, anno: 2001,
pagine: 375 - 380
SICI:
0927-0248(200102)66:1-4<375:HPCFHA>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI FILMS; BOND;
Keywords:
amorphous silicon; plasma CVD; growth rate; high pressure;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Isomura, M Sanyo Elect Co Ltd, New Mat Res Ctr, 1-18-13 Hashiridani, Hirakata, Osaka 5738534, Japan Sanyo Elect Co Ltd 1-18-13 Hashiridani Hirakata Osaka Japan 5738534
Citazione:
M. Isomura et al., "High-pressure plasma CVD for high-quality amorphous silicon", SOL EN MAT, 66(1-4), 2001, pp. 375-380

Abstract

The growth rate of device grade amorphous silicon can be increased up to similar to 7 Angstrom /s by using high-pressure plasma CVD ( similar to 5 Torr). Control of the electrode gap is important for utilizing high-pressure plasma. The narrowest possible gap, below which plasma becomes unstable, isthe best in order to obtain high growth rates from the high-pressure plasma sticking to cathodes. The suppression of higher silane-related radicals is probably responsible for preserving the good quality at the high growth rates because of lower electron temperature in the high pressure and shorterresidence time due to the small plasma space. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 06:49:10