Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma
Autore:
Sakikawa, N; Shishida, Y; Miyazaki, S; Hirose, M;
Indirizzi:
Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan HiroshimaUniv Higashihiroshima Japan 7398527 hihiroshima 7398527, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 66, anno: 2001,
pagine: 337 - 343
SICI:
0927-0248(200102)66:1-4<337:HDOHAS>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; BIAS;
Keywords:
inductively coupled plasma; hydrogenated amorphous silicon; high deposition rate; silane flow rate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Sakikawa, N Hiroshima Univ, Dept Elect Engn, Kagamiyama 1-4-1, Higashihiroshima 7398527, Japan Hiroshima Univ Kagamiyama 1-4-1 Higashihiroshima Japan 7398527
Citazione:
N. Sakikawa et al., "High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma", SOL EN MAT, 66(1-4), 2001, pp. 337-343

Abstract

Inductively coupled plasma (ICP) generated at 13.56 MHz has been employed for high-rate deposition of device-quality hydrogenated amorphous silicon (a-Si:H). It has been shown that an increase in the how rate of a monosilanegas enhances the generation rate of deposition precursors, while the ion flux decreases and becomes saturated. The defect density reaches the minimumat a deposition rate of 2.3 nm/s. It has also been demonstrated that even at deposition rates around 4 nm/s, a-Si:H deposited at 150 degreesC exhibits a subgap defect density lower than similar to 6 x 10(16)cm(-3) after 12 hAM1 (100mW/cm(2)) light soaking. (C) 2001 Published by Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 09:48:05