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Titolo:
Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer
Autore:
Fujiwara, H; Toyoshima, Y; Kondo, M; Matsuda, A;
Indirizzi:
Electrotech Lab, Thin Film Silicon Solar Cells Super Lab, Tsukuba, Ibaraki3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 kuba, Ibaraki3058568, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 66, anno: 2001,
pagine: 209 - 215
SICI:
0927-0248(200102)66:1-4<209:AORISS>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED-AMORPHOUS-SILICON; THIN-FILM GROWTH; N SOLAR-CELLS;
Keywords:
hydrogenated amorphous silicon (a-Si : H); interface layer; spectroscopic ellipsometry; attenuated total reflection spectroscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Fujiwara, H Electrotech Lab, Thin Film Silicon Solar Cells Super Lab, 1-1-4 Umezono, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab 1-1-4 Umezono Tsukuba Ibaraki Japan 3058568 an
Citazione:
H. Fujiwara et al., "Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer", SOL EN MAT, 66(1-4), 2001, pp. 209-215

Abstract

We have applied real-time in situ spectroscopic ellipsometry (SE) and infrared attenuated total reflection spectroscopy (ATR) to investigate a-Si:H nucleation process on substrate that affects the resulting a-Si:H/substrate interface structure significantly. The analyses of these real-time measurements show the formation of a similar to 30 Angstrom thick H-rich interface layer having an average hydrogen content of similar to 20 at.% on a c-Si substrate covered with native oxide (30 Angstrom). This interface layer formation is primarily caused by the H-rich three-dimensional island growth on the substrate. We found a weak dependence of interface layer properties on a-Si:H deposition conditions. This result suggests that the interface layer formation is controlled by the nucleation site density of a-Si:H islands onthe substrate, rather than plasma conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 18:44:48