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Titolo:
A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H
Autore:
Shimizu, T; Sugiyama, H; Kumeda, M;
Indirizzi:
Kanazawa Univ, Fac Engn, Dept Elect & Comp Engn, Kanazawa, Ishikawa 9208667, Japan Kanazawa Univ Kanazawa Ishikawa Japan 9208667 wa, Ishikawa 9208667, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 66, anno: 2001,
pagine: 203 - 207
SICI:
0927-0248(200102)66:1-4<203:ALDBCA>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; SPATIAL-DISTRIBUTION; STATES; LESR;
Keywords:
a-Si : H; light-soaking; dangling bonds; electron spin resonance; constant photocurrent method;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Shimizu, T Kanazawa Univ, Fac Engn, Dept Elect & Comp Engn, Kanazawa, Ishikawa 9208667, Japan Kanazawa Univ Kanazawa Ishikawa Japan 9208667 a 9208667, Japan
Citazione:
T. Shimizu et al., "A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H", SOL EN MAT, 66(1-4), 2001, pp. 203-207

Abstract

A large discrepancy between defect densities evaluated by constant photocurrent method (CPM) and electron spin resonance (ESR) is investigated for hydrogenated amorphous silicon (a-Si:H) with various thicknesses in the process of light soaking (LS). It is shown by a computer simulation that the inhomogeneous defect distribution across the film thickness caused by a rathersmall penetration depth of the white light in the thick film is one of thepossible origins of the discrepancy. But various other causes should also bring about the discrepancy, and the problem is still a puzzling one. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 12:43:23