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Titolo:
Structure sensitive reaction channels of molecular hydrogen on silicon surfaces
Autore:
Durr, M; Raschke, MB; Pehlke, E; Hofer, U;
Indirizzi:
Max Planck Inst Quantum Opt, D-85740 Garching, Germany Max Planck Inst Quantum Opt Garching Germany D-85740 0 Garching, Germany Univ Essen Gesamthsch, Fachbereich Phys, D-45117 Essen, Germany Univ EssenGesamthsch Essen Germany D-45117 Phys, D-45117 Essen, Germany Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany Univ Marburg Marburg Germany D-35032 eich Phys, D-35032 Marburg, Germany Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany Univ Marburg Marburg Germany D-35032 Wissensch, D-35032 Marburg, Germany
Titolo Testata:
PHYSICAL REVIEW LETTERS
fascicolo: 1, volume: 86, anno: 2001,
pagine: 123 - 126
SICI:
0031-9007(20010101)86:1<123:SSRCOM>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
DENSITY-FUNCTIONAL THEORY; PHONON-ASSISTED STICKING; DISSOCIATIVE ADSORPTION; SI(100)-2X1 SURFACE; DETAILED BALANCE; H-2 DESORPTION; DYNAMICS; SI(111)-(7X7); SI(001); TEMPERATURE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Durr, M Max Planck Inst Quantum Opt, D-85740 Garching, Germany Max Planck Inst Quantum Opt Garching Germany D-85740 ng, Germany
Citazione:
M. Durr et al., "Structure sensitive reaction channels of molecular hydrogen on silicon surfaces", PHYS REV L, 86(1), 2001, pp. 123-126

Abstract

The ability of the Si(001) surface to adsorb H-2 molecules dissociatively increases by orders of magnitude when appropriate surface dangling bonds are terminated by H atoms. Through molecular beam techniques the energy dependent sticking probability at different absorption sites on H-precovered andstepped surfaces is measured to obtain information about the barriers to adsorption, which decrease systematically with an increase in coadsorbed H atoms. With the help of density functional calculations for interdimer adsorption pathways, this effect is traced back to the electronic Structure of the different adsorption sites and its interplay with local lattice distortions.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 04:12:46