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Titolo:
Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect transistor memories with silicon nanocrystal floating gates
Autore:
Nagata, E; Takahashi, N; Yasuda, Y; Inukai, T; Ishikuro, H; Hiramoto, T;
Indirizzi:
Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan Univ Tokyo Tokyo Japan 1068558 Ind Sci, Minato Ku, Tokyo 1068558, Japan Chuo Univ, Bunkyo Ku, Tokyo 1128551, Japan Chuo Univ Tokyo Japan 1128551Chuo Univ, Bunkyo Ku, Tokyo 1128551, Japan Univ Tokyo, VLSI Design & Educ Ctr, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 Educ Ctr, Bunkyo Ku, Tokyo 1138656, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 38, anno: 1999,
pagine: 7230 - 7232
SICI:
0021-4922(199912)38:12B<7230:CDONCM>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROOM-TEMPERATURE; TRAPS;
Keywords:
silicon dots; floating gate; threshold voltage shift; unit cell; MOSFET memory;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Nagata, E Univ Tokyo, Inst Ind Sci, Minato Ku, 7-22-1 Roppongi, Tokyo 1068558, Japan Univ Tokyo 7-22-1 Roppongi Tokyo Japan 1068558 o 1068558, Japan
Citazione:
E. Nagata et al., "Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect transistor memories with silicon nanocrystal floating gates", JPN J A P 1, 38(12B), 1999, pp. 7230-7232

Abstract

We report the width and length dependences of threshold voltage shift and its distribution in narrow channel metal-oxide-semiconductor field-effect transistor (MOSFET) memories based on self-assembling silicon nanocrystals. As the channel width decreases, the threshold voltage shift, along with itsdistribution, increases. On the other hand, as the channel length decreases, the threshold voltage shift decreases. These results are well explained by the random distribution of silicon nanocrystals, in particular the number of dots on the narrow channel. The difference in width and length dependences is due to the difference in parallel and serial connections of unit cells. Based on the unit cell model, the width and length dependences of the threshold voltage shift are calculated and compared with the experimental results.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 17:17:53