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Titolo:
Development of a low voltage power booster TWT for a Q-band MMPM
Autore:
Kennedy, J; Colombo, C;
Indirizzi:
Litton Syst Inc, Electron Devices Div, San Carlos, CA 94070 USA Litton Syst Inc San Carlos CA USA 94070 ces Div, San Carlos, CA 94070 USA
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 1, volume: 48, anno: 2001,
pagine: 180 - 182
SICI:
0018-9383(200101)48:1<180:DOALVP>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
5
Recensione:
Indirizzi per estratti:
Indirizzo: Kennedy, J Litton Syst Inc, Electron Devices Div, San Carlos, CA 94070 USALitton Syst Inc San Carlos CA USA 94070 n Carlos, CA 94070 USA
Citazione:
J. Kennedy e C. Colombo, "Development of a low voltage power booster TWT for a Q-band MMPM", IEEE DEVICE, 48(1), 2001, pp. 180-182

Abstract

Compact millimeter wave amplifiers with output powers ranging from around 20 to 100 VV are required for a number of important military and commercialapplications. This paper describes the design of a miniature, loa voltage,vacuum power booster TWT for a Q-band (40-45 GHz) millimeter wave power module (MMPM). At a design voltage of 7.7 kV and a maximum current of 120 mA, an output power goal of greater than 40 W of CW rf output power has been established for the Q-band TWT. Beam confinement is provided using an optimized samariumcobalt PPM stack. Circuit losses at millimeter wavelengths are minimized using a novel wire-wrapped, T-shaped BeO rod support structure, Output poweris transmitted through a 0.051 cm. thick alumina ceramic output window. High overall device efficiency is achieved through the use of a 3 stage depressed collector. A recently completed engineering prototype produced 51 W of CW power at 41GHz, Experimental overall device efficiency was 34.5%. These results will be described, as,well as ongoing work to further improve overall device performance.

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Documento generato il 05/04/20 alle ore 00:31:28