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Titolo:
LASER-INDUCED CRYSTALLIZATION IN GE-SB-TE OPTICAL-RECORDING MATERIALS
Autore:
ZHOU GF; JACOBS BAJ; VANESSPIEKMAN W;
Indirizzi:
PHILIPS RES LABS,PROF HOLSTLAAN 4 NL-5656 AA EINDHOVEN NETHERLANDS
Titolo Testata:
Materials science & engineering. A, Structural materials: properties, microstructure and processing
, volume: 226, anno: 1997,
pagine: 1069 - 1073
SICI:
0921-5093(1997)226:<1069:LCIGOM>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
NUCLEATION; ALLOYS; GROWTH;
Keywords:
PHASE CHANGE MATERIALS; OPTICAL RECORDING; GE-SB-TE THIN FILMS; CRYSTALLIZATION SPEED; CYCLABILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
G.F. Zhou et al., "LASER-INDUCED CRYSTALLIZATION IN GE-SB-TE OPTICAL-RECORDING MATERIALS", Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 1069-1073

Abstract

Laser-induced crystallization behaviour in Ge-Sb-Te optical recordingthin film materials, that are sandwiched between dielectric layers, was studied by a multipulse laser technique. The reflection changes at 780 nm laser wavelength caused by local heating by a pulsed high-powerlaser beam are monitored. Both the nucleation time and the complete crystallization time are found to decrease significantly with increasing phase change layer thickness up to about 25 nm, above which both tend to become constant. Furthermore, the maximum crystallization speed depends on the type of dielectric material. The strong dependence of crystallization speed on layer thickness is explained in terms of competing interface and bulk processes. This finding is of practical use because it allows the design of phase change optical recording media which can be used at high linear recording speeds. (C) 1997 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/07/20 alle ore 04:51:00