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Titolo:
A novel thin-film transistor with self-aligned field induced drain
Autore:
Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF;
Indirizzi:
Natl Nano Device Labs, Hsinchu 300, Taiwan Natl Nano Device Labs HsinchuTaiwan 300 evice Labs, Hsinchu 300, Taiwan Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan 300 Inst Elect, Hsinchu 300, Taiwan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 1, volume: 22, anno: 2001,
pagine: 26 - 28
SICI:
0741-3106(200101)22:1<26:ANTTWS>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; POLYSILICON;
Keywords:
field-induced drain; leakage current; thin-film transistor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Lin, HC Natl Nano Device Labs, Hsinchu 300, Taiwan Natl Nano Device Labs Hsinchu Taiwan 300 bs, Hsinchu 300, Taiwan
Citazione:
H.C. Lin et al., "A novel thin-film transistor with self-aligned field induced drain", IEEE ELEC D, 22(1), 2001, pp. 26-28

Abstract

In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with theireffective FID length set by two separate photolithographic masking layers,the new SAFID is totally immune to photomasking misalignment errors, whileenjoying the low off-state leakage as well as high turn-on characteristicsinherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 13:22:26