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Titolo:
To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel
Autore:
Yaung, DN; Fang, YK; Chen, CH; Hung, CC; Tsao, FC; Wuu, SG; Liang, MS;
Indirizzi:
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 70101, Taiwan Natl Cheng Kung Univ Tainan Taiwan 70101 chnol Lab, Tainan 70101, Taiwan Taiwan Semicond Mfg Co, Hsinchu, Taiwan Taiwan Semicond Mfg Co Hsinchu Taiwan Semicond Mfg Co, Hsinchu, Taiwan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 1, volume: 22, anno: 2001,
pagine: 23 - 25
SICI:
0741-3106(200101)22:1<23:TSPCOH>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS; POLY-SI TFT;
Keywords:
hydrogenation poly-Si TFTs; photoexcited current; polychannel oxidation; submicron bottom-gate TFTs; unhydrogenated TFTs;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Yaung, DN Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, 1 Univ Rd, Tainan 70101, Taiwan Natl Cheng Kung Univ 1 Univ Rd Tainan Taiwan 70101 0101, Taiwan
Citazione:
D.N. Yaung et al., "To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel", IEEE ELEC D, 22(1), 2001, pp. 23-25

Abstract

In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs, The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in detail. An optimal combination of both technologies has been proposed according to the investigation. The poly-Si TFTs treated with the optimal process can be operated well under a high illumination environment.

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Documento generato il 30/11/20 alle ore 12:41:59