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Titolo:
ENERGY-BAND OFFSETS OF SIGEC HETEROJUNCTIONS
Autore:
KOLODZEY J; CHEN F; ORNER BA; GUERIN D; SHAH SI;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN,140 EVANS HALL NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716 DUPONT CO INC,EXPT STN WILMINGTON DE 19898
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 302, anno: 1997,
pagine: 201 - 203
SICI:
0040-6090(1997)302:1-2<201:EOOSH>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Keywords:
BAND STRUCTURE; HETEROSTRUCTURES; SEMICONDUCTORS; X-RAY PHOTOELECTRON SPECTROSCOPY (XPS);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
J. Kolodzey et al., "ENERGY-BAND OFFSETS OF SIGEC HETEROJUNCTIONS", Thin solid films, 302(1-2), 1997, pp. 201-203

Abstract

We report on conduction and valence band offsets in thick, relaxed Ge-rich Si1-x-yGexCy alloys grown by solid source molecular beam epitaxyon (100) Si substrates. X-ray photoemission spectroscopy was used to measure the valence band energies with respect to atomic core levels, and showed that C increased the valence band maximum of SiGeC by +48 meV/%C. The bandgap energies were obtained from optical absorption, andwere combined with the valence band offsets to yield the conduction band offsets. For SiGeC/Si heterojunctions, the offsets were typically 0.6 eV for the valence band and 0.38 eV for the conduction band, with a staggered type II alignment. These offsets can provide significant electron and hole confinement for device applications. (C) 1997 Elsevier Science S.A.

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Documento generato il 14/07/20 alle ore 19:21:53