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Titolo:
Anomalous effect of temperature on atomic layer deposition of titanium dioxide
Autore:
Aarik, J; Aidla, A; Mandar, H; Sammelselg, V;
Indirizzi:
Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia Univ Tartu Tartu Estonia EE-51014 tu, Inst Phys, EE-51014 Tartu, Estonia
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 4, volume: 220, anno: 2000,
pagine: 531 - 537
SICI:
0022-0248(200012)220:4<531:AEOTOA>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
TIO2 THIN-FILMS; TANTALUM OXIDE; GROWTH;
Keywords:
atomic layer deposition; titanium dioxide; crystallization; surface morphology;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Aarik, J Univ Tartu, Inst Mat Sci, Tahe 4, EE-51010 Tartu, Estonia Univ Tartu Tahe 4 Tartu Estonia EE-51010 EE-51010 Tartu, Estonia
Citazione:
J. Aarik et al., "Anomalous effect of temperature on atomic layer deposition of titanium dioxide", J CRYST GR, 220(4), 2000, pp. 531-537

Abstract

A strong influence of growth temperature on the deposition rate and refractive index of TiO2 thin films, grown by atomic layer deposition from TiCl4 and H2O was observed. The growth rate increased from 0.05 to 0.09 nm per cycle while the refractive index decreased from 2.83 to 2.00 with the increase of growth temperature from 150 degreesC to 225 degreesC. The effect was due to crystallization processes starting at these temperatures. The substrate temperature range, in which the growth rate most significantly changed, depended on the TiCl4 pulse time. (C) 2000 Elsevier Science B.V. All rightsreserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 11:41:11