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Titolo:
COMPUTER-SIMULATION OF SURFACE GROWTH
Autore:
XIAO RF;
Indirizzi:
HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,CLEAR WATER BAY KOWLOON HONG KONG
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 174, anno: 1997,
pagine: 531 - 538
SICI:
0022-0248(1997)174:1-4<531:COSG>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY;
Keywords:
COMPUTER SIMULATION; THIN FILM EPITAXY; SURFACE ROUGHENING AND STEP INSTABILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
R.F. Xiao, "COMPUTER-SIMULATION OF SURFACE GROWTH", Journal of crystal growth, 174(1-4), 1997, pp. 531-538

Abstract

A Monte Carlo model has been used to study surface growth in thin film epitaxy. The model accounts for atom attachment, detachment, and surface diffusion. By varying the deposition temperature and impingement rate, we have explored the surface roughening transition in a nonequilibrium situation and the conditions under which normal, lateral, and step flow growth occurs. The results show that reentrant oscillation occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin film deposition on substrates with permanent steps. We have also examined the morphological instability in step flow growth and found that it is related to the step height. Steps with multi-atomic layers areseen to be less stable in a surface diffusion field, due to a decrease in the attachment rate of growth units from the upper terrace.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 00:07:18