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Titolo:
Atomic layer deposition of titanium oxide from TiI4 and H2O2
Autore:
Kukli, K; Ritala, M; Schuisky, M; Leskela, M; Sajavaara, T; Keinonen, J; Uustare, T; Harsta, A;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland Univ HelsinkiHelsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 6, volume: 6, anno: 2000,
pagine: 303 - 310
SICI:
0948-1907(200011)6:6<303:ALDOTO>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; DIOXIDE THIN-FILMS; NANOCRYSTALLINE TITANIA; RAMAN-SPECTROSCOPY; LOW-TEMPERATURE; TIO2 FILMS; GROWTH; RUTILE; PRECURSOR; EPITAXY;
Keywords:
TiO2; TiI4; atomic layer deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
42
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
K. Kukli et al., "Atomic layer deposition of titanium oxide from TiI4 and H2O2", CHEM VAPOR, 6(6), 2000, pp. 303-310

Abstract

TiO2 thin films have been grown on amorphous soda lime glass and polycrystalline silicon substrates from Til(4) and H2O2 by atomic layer deposition (ALD) in the temperature range 250-490 degreesC. The film growth rate and refractive index increased Linearly with growth temperature up to 300 degreesC. Between 300 degreesC and 400 degreesC, the film growth rate tended to stabilize. Above 400 degreesC. there was a further rapid increase in the growth rate, together with a corresponding increase in the thickness profile. The refractive index reached 2.70-2.75 in the films grown above 300 degreesC. The films contained low amounts of residual hydrogen and were virtually iodine-free. When deposited below 300 degreesC and above 325 degreesC. the films contained weakly crystallized, but still distinct. anatase and rutile phases, respectively. Reflective high-energy electron diffraction (RHEED) studies revealed that the uppermost layers of the films grown on silicon at 275 degreesC, 325 degreesC, and 425 degreesC contained anatase phase, regardless of deposition temperature. In the temperature range 300-325 degreesC.a transition region was established where either the films became less ordered, or they contained rather strongly ordered, but unstable, suboxide phases. The suboxide phase, when present, was transformed into a mixture of anatase and rutile when stored in air at room temperature.

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Documento generato il 25/09/20 alle ore 21:13:41