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Titolo:
Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)(3)](4) and H2O
Autore:
Kukli, K; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 6, volume: 6, anno: 2000,
pagine: 297 - 302
SICI:
0948-1907(200011)6:6<297:LDOZON>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER EPITAXY; DIOXIDE THIN-FILMS; ZRO2; PRECURSOR; GROWTH;
Keywords:
zirconium tetra-tert-butoxide; ZrO2; atomic layer deposition; nanolaminates;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
K. Kukli et al., "Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)(3)](4) and H2O", CHEM VAPOR, 6(6), 2000, pp. 297-302

Abstract

Zirconium oxide thin films were grown by atomic layer deposition (ALD) at low temperatures, ranging from 150 degreesC to 300 degreesC, by alternate surface reactions between Zr[OC(CH3)(3)](4) and H2O. The films grown in the temperature range 200-300 degreesC were nanocrystalline. No films could be deposited above 300 degreesC, The refractive index of the films reached 1.95, measured at a wavelength of 580 nm. The permittivity of the nanocrystalline films was approximately 32. The permittivity and resistivity of the films were increased by depositing ZrO2-Ta2O5 nanolaminates and annealing in ambient air.

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Documento generato il 20/09/20 alle ore 08:00:01