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Titolo:
A new Cu-CMP technology for next generation LSIs
Autore:
Oku, Y; Matsumoto, M; Kamisawa, A;
Indirizzi:
ROHM CO LTD, Semicond R&D Headquarters, Proc Technol Div, Ukyo Ku, Kyoto 6158585, Japan ROHM CO LTD Kyoto Japan 6158585 chnol Div, Ukyo Ku, Kyoto 6158585, Japan ROHM CO LTD, LSI Technol Div, Kyoto 6158585, Japan ROHM CO LTD Kyoto Japan 6158585 D, LSI Technol Div, Kyoto 6158585, Japan
Titolo Testata:
JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
fascicolo: 10, volume: 45, anno: 2000,
pagine: 732 - 738
SICI:
0915-1168(2000)45:10<732:ANCTFN>2.0.ZU;2-2
Fonte:
ISI
Lingua:
JPN
Keywords:
Cu-CMP; fixed abrasive pad; Cu interconnection; dishing; erosion; planarization; scratch; roughness; pattern sensitivity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Oku, Y ROHM CO LTD, Semicond R&D Headquarters, Proc Technol Div, Ukyo Ku, 21 Saiin Mizosaki Cho, Kyoto 6158585, Japan ROHM CO LTD 21 Saiin Mizosaki Cho Kyoto Japan 6158585 58585, Japan
Citazione:
Y. Oku et al., "A new Cu-CMP technology for next generation LSIs", J JPN SOC T, 45(10), 2000, pp. 732-738


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/20 alle ore 22:03:37