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Titolo:
Reaction of copper oxide and beta-diketone for in situ cleaning of metal copper in a copper chemical vapor deposition reactor
Autore:
Sekiguchi, A; Kobayashi, A; Koide, T; Okada, O; Hosokawa, N;
Indirizzi:
Anelva Corp, Proc Dev Lab, Fuchu, Tokyo 1838508, Japan Anelva Corp Fuchu Tokyo Japan 1838508 ev Lab, Fuchu, Tokyo 1838508, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 11, volume: 39, anno: 2000,
pagine: 6478 - 6486
SICI:
0021-4922(200011)39:11<6478:ROCOAB>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
HEXAFLUOROACETYLACETONE; FILMS;
Keywords:
in situ cleaning; Cu-CVD; beta-diketone; 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; copper oxide; bis-hexafluoroacetylacetonate copper; thermogravimetry; Arrhenius plot; weight ratio etching rate; vaporization rate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Sekiguchi, A Anelva Corp, Proc Dev Lab, 5-8-1 Yotsuya, Fuchu, Tokyo 1838508, Japan Anelva Corp 5-8-1 Yotsuya Fuchu Tokyo Japan 1838508 08, Japan
Citazione:
A. Sekiguchi et al., "Reaction of copper oxide and beta-diketone for in situ cleaning of metal copper in a copper chemical vapor deposition reactor", JPN J A P 1, 39(11), 2000, pp. 6478-6486

Abstract

For ill situ cleaning of inner reactor walls of copper chemical vapor deposition chambers used in the copper wiring process of LSI, etching of the deposited metallic copper is carried out by three step processes of copper oxidation, complexation with beta -diketone, and vaporization to allow evacuator, in this paper, reactions suitable for the latter two processes are described. Reactions of copper oxide with three kinds of beta -diketone, hexafluoroacetylacetone (Hhfac), acetylacetone and dipivaloylmethane, were studied using thermogravimetry in the range from room temperature to 400 degreesC. Only Hhfac reacted with copper oxide showing etching in the temperature range above 170 degreesC. Al 350 degreesC the weight ratio etching rate was0.29 wt%/min at atmospheric pressure and 0.06 wt%/min at 665 Pa. The evaporation rate of the reaction product, Cu(hfac)(2), was 5.3 wt%/min at 150 degreesC, which is sufficiently higher than the etching rate of copper oxide. Reactions are as follows: 2CuO --> Cu2O + 1/2O(2), Cu2O + Hhfac --> Cu(hfac) + CuOH, 2Cu(hfac) --> Cu(hfac)(2) + Cu, and Cu + CuO --> Cu2O.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/08/20 alle ore 02:08:05