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Titolo:
Power efficiency of a semiconductor laser with an external cavity
Autore:
Annovazzi-Lodi, V; Merlo, S; Moroni, S;
Indirizzi:
Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy Univ Pavia PaviaItaly I-27100 partimento Elettron, I-27100 Pavia, Italy
Titolo Testata:
OPTICAL AND QUANTUM ELECTRONICS
fascicolo: 12, volume: 32, anno: 2000,
pagine: 1343 - 1350
SICI:
0306-8919(200012)32:12<1343:PEOASL>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
INJECTION; FEEDBACK;
Keywords:
external cavity laser; laser diode; optical feedback; power efficiency;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Annovazzi-Lodi, V Univ Pavia, Dipartimento Elettron, Via Ferrata 1, I-27100 Pavia, Italy Univ Pavia Via Ferrata 1 Pavia Italy I-27100 via, Italy
Citazione:
V. Annovazzi-Lodi et al., "Power efficiency of a semiconductor laser with an external cavity", OPT QUANT E, 32(12), 2000, pp. 1343-1350

Abstract

Optical feedback modifies the power vs. current diagram of a laser diode as well as its spectrum. Though optimization of the spectral characteristicsis usually the main goal in the design of an external cavity source, powerefficiency is also important, especially with relatively high power devices, where temperature variations due to dissipation can have an impact on the wavelength stability and on the laser lifetime. A useful parameter to describe the total power efficiency of the stabilized laser, relative to that of the solitary laser, is proposed in this paper. The dependence of this parameter on the characteristics of the active device, and of the external cavity, is investigated.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 21:09:58