Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Rapid relaxation and electronic properties of a-Si : H
Autore:
Chen, WC; Kemp, M; Hamel, LA; Yelon, A;
Indirizzi:
Univ Montreal, Grp Rech Phys & Technol Couches Minces, Dept Phys, Montreal, PQ H3C 3J7, Canada Univ Montreal Montreal PQ Canada H3C 3J7 ys, Montreal, PQ H3C 3J7, Canada Ecole Polytech, Dept Genie Phys, Grp Rech Phys & Technol Couches Minces, GCM, Montreal, PQ H3C 3A7, Canada Ecole Polytech Montreal PQ Canada H3C 3A7M, Montreal, PQ H3C 3A7, Canada Duke Univ, Dept Zool, Durham, NC 27708 USA Duke Univ Durham NC USA 27708Duke Univ, Dept Zool, Durham, NC 27708 USA
Titolo Testata:
JOURNAL OF NON-CRYSTALLINE SOLIDS
fascicolo: 2-3, volume: 277, anno: 2000,
pagine: 219 - 224
SICI:
0022-3093(200011)277:2-3<219:RRAEPO>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; TIME-OF-FLIGHT; MONTE-CARLO SIMULATIONS; LOW-TEMPERATURES; CHARGE-TRANSPORT; RECOMBINATION; MOBILITY; PHOTOLUMINESCENCE; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
34
Recensione:
Indirizzi per estratti:
Indirizzo: Hamel, LA Univ Montreal, Grp Rech Phys & Technol Couches Minces, Dept Phys, CP 6128,Succursale Ctr Ville, Montreal, PQ H3C 3J7, Canada Univ Montreal CP 6128,Succursale Ctr Ville Montreal PQ Canada H3C 3J7
Citazione:
W.C. Chen et al., "Rapid relaxation and electronic properties of a-Si : H", J NON-CRYST, 277(2-3), 2000, pp. 219-224

Abstract

We analyze the impact of trapped carrier relaxation on the determination of the microscopic electronic mobility of a-Si:H. The calculations show that, if there is relaxation, the mobility is substantially higher than that predicted by the standard multiple trapping picture. This model therefore explains the absence of room temperature geminate recombination (GR) in a-Si:H, and is consistent with both time-of-flight (TOF) and photoluminescence (PL) experiments. That is, we may understand three experimental results whichhave long appeared to be contradictory, in the framework of a single, simple model. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 10:23:39