Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Anomalous diffusion of boron in silicon driven under the N2O ambient
Autore:
Liu, DG; Yang, WL; Tsang, JS; Chu, KW; Shiau, MS; Yang, SY; Hung, YM;
Indirizzi:
Feng Chia Univ, Inst Elect Engn, Taichung 40724, Taiwan Feng Chia Univ Taichung Taiwan 40724 Elect Engn, Taichung 40724, Taiwan Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan Feng Chia Univ Taichung Taiwan 40724 Elect Engn, Taichung 40724, Taiwan Natl Nano Device Lab, Hsinchu 300, Taiwan Natl Nano Device Lab Hsinchu Taiwan 300 Device Lab, Hsinchu 300, Taiwan Worldwide Semicond Co, Hsinchu 300, Taiwan Worldwide Semicond Co HsinchuTaiwan 300 emicond Co, Hsinchu 300, Taiwan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 12, volume: 21, anno: 2000,
pagine: 572 - 574
SICI:
0741-3106(200012)21:12<572:ADOBIS>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
SHALLOW;
Keywords:
boron; diffusion; oxidation-enhanced diffusion; semiconductor impurities;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Liu, DG Feng Chia Univ, Inst Elect Engn, Taichung 40724, Taiwan Feng Chia Univ Taichung Taiwan 40724 ngn, Taichung 40724, Taiwan
Citazione:
D.G. Liu et al., "Anomalous diffusion of boron in silicon driven under the N2O ambient", IEEE ELEC D, 21(12), 2000, pp. 572-574

Abstract

In this letter p(+)/n junctions formed by a solid source of a boron-doped layer under different ambient gases sill be demonstrated, In this study, itmas found that the obtained junction depth depends strongly on the ambientgas. Especially in the N2O ambient, the diffusion of boron is enormously enhanced, The resulting junction depth can be as high as eight times of those junctions formed in N-2. Such phenomenon is much more profound than the well-known oxidation-enhanced diffusion (OED) effect of O-2. We call this new effect as the nitri-oxidation-enhanced diffusion: (NOED) effect. As a consequence, it is proposed that the NOED effect is instrumental for low-cost fabrication of well structures in the CMOS technology.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/07/20 alle ore 17:43:19