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Titolo:
EFFECT OF SAPPHIRE NITRIDATION ON GAN BY MOCVD
Autore:
BYUN D; KIM G; JEONG J; LEE JI; PARK D; KUM DW; KIM B; YOO J;
Indirizzi:
KOREA INST SCI & TECHNOL SEOUL 136650 SOUTH KOREA KOREA UNIV,DEPT MAT SCI & ENGN SEOUL 136701 SOUTH KOREA SUNG KYUN KWAN UNIV,DEPT MAT ENGN SUWON 440746 SOUTH KOREA
Titolo Testata:
Journal of the Korean Physical Society
, volume: 30, anno: 1997, supplemento:, S
pagine: 52 - 54
SICI:
0374-4884(1997)30:<52:EOSNOG>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
BUFFER LAYER; DEVICES; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
D. Byun et al., "EFFECT OF SAPPHIRE NITRIDATION ON GAN BY MOCVD", Journal of the Korean Physical Society, 30, 1997, pp. 52-54

Abstract

Defects in the film play a critical role an lifetime and efficiency of LEDs and LDs. Majority of the defects in GaN films is the threading dislocations starting from the interface between substrate and film and grow with the film to the surface. The manipulation of physical and chemical properties of the interface provides an opportunity to reducegrow-in defects. When sapphire substrate was used, defect densities could be reduced not only by the use of an optimized buffer layer but also by the nitridation of the substrate surface. Crystal qualities andoptical properties of GaN could be changed by the substrate surface roughness. AFM analysis of the nitridated sapphire substrate surface led to the best nitridation condition for the GaN growth and this was confirmed by DCXRD and photoluminescence (PL) spectra. GaN depositions and nitridations were carried out in a horizontal MOCVD system using trimethylgallium and ammonia.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 01:00:29