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Titolo:
Heat transfer simulation of HFCVD and fundamentals of diamond vapor growthreactor designing
Autore:
Song, GH; Sun, C; Huang, RF; Wen, LS; Shi, CX;
Indirizzi:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China Acad Sinica Shenyang Peoples R China 110015 yang 110015, Peoples R China City Univ Hong Kong, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong Hong Kong Hong Kong Peoples R China Peoples R China
Titolo Testata:
SURFACE & COATINGS TECHNOLOGY
fascicolo: 1-3, volume: 131, anno: 2000,
pagine: 500 - 505
SICI:
0257-8972(20000901)131:1-3<500:HTSOHA>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAS-FLOW; DEPOSITION;
Keywords:
chemical vapor growth; diamond; simulation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Wen, LS Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China Acad Sinica Shenyang Peoples R China 110015 015, Peoples R China
Citazione:
G.H. Song et al., "Heat transfer simulation of HFCVD and fundamentals of diamond vapor growthreactor designing", SURF COAT, 131(1-3), 2000, pp. 500-505

Abstract

Thermal blockage, thermal round flow and unevenness of state parameter fields have been revealed through simulation of heat transfer in hot filament chemical vapor growth and experimental study of the process. The phenomena lead to deviation from rational process conditions resulting in low growth rate, high production cost and instability of product quality. It has been shown that the state parameter field can be controlled and large area, highspeed, high quality diamond growth can be realized by using a tubular reactor with a homogeneous distribution of hot filaments in the cross-section of the reactor and adiabatic boundary conditions. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 17:11:37