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Titolo:
ELECTRONIC-STRUCTURE AND WAVE-FUNCTIONS OF INTERFACE STATES IN HGTE-CDTE QUANTUM-WELLS AND SUPERLATTICES
Autore:
FORNARI M; CHEN HH; FU L; GRAFT RD; LOHRMANN DJ; MORONI S; PARRAVICINI GP;
Indirizzi:
UNIV TRIESTE,DIPARTIMENTO FIS TEOR,STRADA COSTIERA 11 I-34014 TRIESTEITALY IST NAZL FIS MAT I-34014 TRIESTE ITALY CATHOLIC UNIV AMER,DEPT PHYS WASHINGTON DC 20064 USA,RES LAB,INFRARED TECHNOL BRANCH FT BELVOIR VA 22060 USA,CTR NIGHT VIS & ELECTROOPT FT BELVOIR VA 22060 INT CTR THEORET PHYS I-34014 TRIESTE ITALY UNIV PAVIA,DIPARTIMENTO FIS A VOLTA I-27100 PAVIA ITALY IST NAZL FIS MAT I-27100 PAVIA ITALY USA,RES OFF RES TRIANGLE PK NC 27709
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 24, volume: 55, anno: 1997,
pagine: 16339 - 16348
SICI:
0163-1829(1997)55:24<16339:EAWOIS>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
VALENCE-BAND-OFFSET; ENVELOPE-FUNCTION APPROXIMATION; INDUCED INTRABAND TRANSITIONS; SHORT-PERIOD SUPERLATTICES; HGTE/CDTE SUPERLATTICE; OPTICAL-PROPERTIES; EXCITED-STATES; SUPER-LATTICE; GAP; SEMICONDUCTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
40
Recensione:
Indirizzi per estratti:
Citazione:
M. Fornari et al., "ELECTRONIC-STRUCTURE AND WAVE-FUNCTIONS OF INTERFACE STATES IN HGTE-CDTE QUANTUM-WELLS AND SUPERLATTICES", Physical review. B, Condensed matter, 55(24), 1997, pp. 16339-16348

Abstract

We report on extensive tight-binding calculations of electronic states in HgTe-CdTe heterojunctions, quantum wells, and superlattices. The method of solution is based on the Green's function and a powerful renormalization technique. While the band structures that we obtain are basically consistent with previous calculations by other authors with several different methods and parametrizations, we have made substantial progress in the detailed study of the corresponding wave functions and their atomic-orbital content. That allows a conclusive identification and analysis of the peculiar interface states that occur in these microstructures, and shows the crucial role played by the s-p mixing that derives from coupling of Gamma(8)- and Gamma(6)-like bands of the composing materials. In particular, the critical concentration x(alpha)at which the semimetal-semiconductor transition occurs in the Hg1-xCdxTe simple alloy is shown to be related to a critical concentration x(c) occurring in (HgTe)(m)(Hg1-xCdxTe)(n) superlattice alloys, at whichinterfacial states (anti)cross, with maximum s-p mixing. We also apply a modified (two- or n-step) Lanczos method to determine real and imaginary parts of all the components of the wave-function amplitude, to confirm or further investigate the complete nodal structure. Finally, we present some results regarding the question of large versus small valence-band offset for this type of interface.

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Documento generato il 01/12/20 alle ore 22:32:59