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Titolo:
ELECTRICAL-PROPERTIES OF PLATINUM-HYDROGEN COMPLEXES IN SILICON
Autore:
SACHSE JU; SVEINBJORNSSON EO; JOST W; WEBER J; LEMKE H;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665 D-70506 STUTTGART GERMANY TECH UNIV BERLIN,INST WERKSTOFFE ELEKTROTECH D-10623 BERLIN GERMANY
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 24, volume: 55, anno: 1997,
pagine: 16176 - 16185
SICI:
0163-1829(1997)55:24<16176:EOPCIS>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
LEVEL TRANSIENT SPECTROSCOPY; DEEP LEVELS; DOPED SILICON; ACCEPTOR; STATES; SI; SEMICONDUCTORS; TRAPS; AU;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
39
Recensione:
Indirizzi per estratti:
Citazione:
J.U. Sachse et al., "ELECTRICAL-PROPERTIES OF PLATINUM-HYDROGEN COMPLEXES IN SILICON", Physical review. B, Condensed matter, 55(24), 1997, pp. 16176-16185

Abstract

The interaction between hydrogen and platinum is studied in n- and p-type silicon using deep-level transient spectroscopy. Hydrogen is introduced by wet-chemical etching or during crystal growth. In both caseswe find that hydrogen forms only electrically active complexes with platinum. Four platinum-hydrogen related deep levels are identified: E(90) at E-C-0.18 eV, E(250) at E-C-0.50 eV, H(150) at E-V+0.30 eV, and H(210) at E-V+0.40 eV. These levels belong to at least three differentplatinum-hydrogen complexes. Level E(250) is identical to the so-called midgap level in Pt-doped Si, which is believed to control the minority-carrier lifetime in Pt-doped silicon. Level H(150) is an acceptor and is present both in n- and p-type samples after hydrogenation. It belongs to a platinum-hydrogen complex which contains more hydrogen atoms than the complexes responsible for the other hydrogen-related levels. Annealing at temperatures above 600 K results in a complete dissociation of all the platinum-hydrogen related defects and the substitutional platinum concentration is fully restored.

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Documento generato il 02/07/20 alle ore 20:01:23