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Titolo:
Texture development in nanocrystalline hafnium dioxide thin films grown byatomic layer deposition
Autore:
Aarik, J; Aidla, A; Mandar, H; Sammelselg, V; Uustare, T;
Indirizzi:
Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia Univ Tartu Tartu Estonia EE-51014 tu, Inst Phys, EE-51014 Tartu, Estonia
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 220, anno: 2000,
pagine: 105 - 113
SICI:
0022-0248(200011)220:1-2<105:TDINHD>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAMMA-ALUMINA; OXIDE-FILMS; EPITAXY; HFO2; TEMPERATURE; THICKNESS; SURFACES; COATINGS; SILICA; VAPOR;
Keywords:
hafnium dioxide; atomic layer deposition; crystallization;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Aarik, J Univ Tartu, Inst Mat Sci, Tahe 4, EE-51010 Tartu, Estonia Univ Tartu Tahe 4 Tartu Estonia EE-51010 EE-51010 Tartu, Estonia
Citazione:
J. Aarik et al., "Texture development in nanocrystalline hafnium dioxide thin films grown byatomic layer deposition", J CRYST GR, 220(1-2), 2000, pp. 105-113

Abstract

Structure development in hafnium dioxide thin films grown by atomic layer deposition was studied. The method allowed deposition of nanocrystalline films on silicon and silica substrates at temperatures 300-940 degreesC. The crystalline films of 30-375 nm thickness contained monoclinic HfO2, mainly,independent of the growth temperature used. Both orientation and sizes of crystallites depended on the growth temperature and film thickness. The films with most developed preferential orientation (texture) were obtained at 500 degreesC. The preferential orientation appeared because the crystallites grew faster in the directions [001] and [111] than in the other crystallographic directions. In the highly textured films grown at 500 degreesC, thecrystallite sizes did not exceed 50 nm while in the films grown at 300 degreesC and 940 degreesC they reached 100 nm. Variation of precursor doses atthe growth temperature 940 degreesC allowed us to obtain preferentially oriented monoclinic and/or randomly oriented cubic structure at the thin-filmsurface. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 19:17:59