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Titolo:
Magnetic-field-assisted anodization of GaAs substrates
Autore:
Morishita, Y; Kawai, S; Sunagawa, J; Suzuki, T;
Indirizzi:
Tokyo Univ Agr & Technol, Dept Appl Phys, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Tokyo Japan 1848588 Phys, Tokyo 1848588, Japan
Titolo Testata:
ELECTROCHEMICAL AND SOLID STATE LETTERS
fascicolo: 1, volume: 4, anno: 2001,
pagine: G4 - G6
SICI:
1099-0062(200101)4:1<G4:MAOGS>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SELF-ORGANIZED FORMATION; PHOTONIC CRYSTALS; NANOHOLE ARRAYS; ANODIC ALUMINA; INAS ISLANDS; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Morishita, Y Tokyo Univ Agr & Technol, Dept Appl Phys, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Tokyo Japan 1848588 1848588, Japan
Citazione:
Y. Morishita et al., "Magnetic-field-assisted anodization of GaAs substrates", EL SOLID ST, 4(1), 2001, pp. G4-G6

Abstract

The effect of a magnetic field on structural properties during anodizationof GaAs substrates was investigated to gain insight into formation of ordered hole arrays on GaAs surfaces. Lorentz force induced by a magnetic fieldconsiderably affected formation of honeycomb hole arrays. In anodization with a magnetic field parallel to the surface, regularity of honeycomb holeswas increased by increasing the magnetic field. The size of honeycomb holes also increased with increased magnetic field. The cross-sectional shape of holes anodized with a magnetic field parallel to the surface was asymmetrical, and the holes were shallow. For the sample anodized with a magnetic field perpendicular to the surface, the shape of holes was symmetric, and the holes were deep. (C) 2000 The Electrochemical Society. S1099-0062(00)07-063-2. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/01/20 alle ore 09:45:37