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Titolo:
MODELING AND ANALYSIS OF CAPACITANCES IN METALLIC SINGLE-ELECTRON TUNNELING STRUCTURES
Autore:
KNOLL M; UHLMANN HF; GOTZ M; KRECH W;
Indirizzi:
TECH UNIV ILMENAU D-98684 ILMENAU GERMANY UNIV JENA D-07743 JENA GERMANY
Titolo Testata:
IEEE transactions on applied superconductivity
fascicolo: 2, volume: 7, anno: 1997,
parte:, 3
pagine: 3524 - 3527
SICI:
1051-8223(1997)7:2<3524:MAAOCI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
JUNCTIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Knoll et al., "MODELING AND ANALYSIS OF CAPACITANCES IN METALLIC SINGLE-ELECTRON TUNNELING STRUCTURES", IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3524-3527

Abstract

The calculation of the capacitances between well-separated thin coplanar electrodes is of fundamental importance in single charge electronics, e.g. for optimizing the geometry of digital circuits with respect to desired coupling as well as to parasitic cross-talk capacitances. We are able to extract such capacitances from three-dimensional numerical field computations basing on the boundary element method. Our program yields relevant information about the dependence of the capacitanceon geometry as verified by comparing calculated gate coupling capacitances of different types of single electron transistors with values obtained from the experiment.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 16:10:20