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Titolo:
Field-effect transistor with oligoaniline thin films as semiconductor
Autore:
Kuo, CT; Weng, SZ;
Indirizzi:
Tatung Inst Technol, Dept Chem Engn, Taipei 104, Taiwan Tatung Inst Technol Taipei Taiwan 104 Dept Chem Engn, Taipei 104, Taiwan
Titolo Testata:
POLYMERS FOR ADVANCED TECHNOLOGIES
fascicolo: 8-12, volume: 11, anno: 2000,
pagine: 716 - 722
SICI:
1042-7147(200008/12)11:8-12<716:FTWOTF>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
CONJUGATED POLYMERS; HIGH-MOBILITY; PENTACENE; POLY(3-HEXYLTHIOPHENE); POLYACETYLENE; CONDUCTION; INSULATOR; TRANSPORT; DIODES; DEVICE;
Keywords:
oligoaniline; metal-oxide-semiconductor; field-effect transistor; field-effect mobility; on/off current ratio; vacuum evaporating technique;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Kuo, CT Tatung Inst Technol, Dept Chem Engn, 40 Chungshan N Rd,Sect 3, Taipei 104,Taiwan Tatung Inst Technol 40 Chungshan N Rd,Sect 3 Taipei Taiwan 104 an
Citazione:
C.T. Kuo e S.Z. Weng, "Field-effect transistor with oligoaniline thin films as semiconductor", POLYM ADV T, 11(8-12), 2000, pp. 716-722

Abstract

These field-effect transistors (FETs) are fabricated with 16ANI (16-mer aniline oligomer) thin films as the semiconducting layer. These FETs have ideal source current-drain source voltage characteristics. The field-effect mobility (fabricated by vacuum evaporation) is 0.034 cm(2)/V sec and on/off current ratio above 10(4), which are two orders of magnitude larger than those fabricated by spin-coating technique, These transistor's performances can be improved significantly for FET fabrication by vacuum evaporation. Copyright (C) 2000 John Wiley & Sons, Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 20:25:01