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Titolo:
Polysilane light-emitting diodes
Autore:
Suzuki, H; Hoshino, S; Furukawa, K; Ebata, K; Yuan, CH; Bleyl, I;
Indirizzi:
NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Atsugi Kanagawa Japan 2430198 s Labs, Atsugi, Kanagawa 2430198, Japan
Titolo Testata:
POLYMERS FOR ADVANCED TECHNOLOGIES
fascicolo: 8-12, volume: 11, anno: 2000,
pagine: 460 - 467
SICI:
1042-7147(200008/12)11:8-12<460:PLD>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON-BACKBONE POLYMERS; NEAR-ULTRAVIOLET ELECTROLUMINESCENCE; POLY(METHYLPHENYLSILANE); DEVICES; BAND; TRANSPORT;
Keywords:
electroluminescence; polysilanes; polymer light-emitting diodes; ultraviolet/near-ultraviolet light; structural phase transition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
33
Recensione:
Indirizzi per estratti:
Indirizzo: Suzuki, H NTT, Basic Res Labs, 3-1 Morinosato, Atsugi, Kanagawa 2430198, Japan NTT 3-1 Morinosato Atsugi Kanagawa Japan 2430198 2430198, Japan
Citazione:
H. Suzuki et al., "Polysilane light-emitting diodes", POLYM ADV T, 11(8-12), 2000, pp. 460-467

Abstract

This paper discusses the material factors which have led to a recent breakthrough in polysilane light-emitting diodes (LEDs) made from a diaryl polysilane, poly[bis(p-n-butylphenyl)silane] (PBPS), by comparing them with LEDswhich employ a conventional polysilane, poly(methylphenylsilane). In contrast to LEDs based on conventional polysilanes in which a weak ultraviolet Electroluminescence (EL) plas detected either with a strong broad visible ELor only at low temperatures, room-temperature pure near-ultraviolet EL wasobserved with a quantum? effciency of 0.1% photons/electron with an electron injecting Al electrode in PBPS-LEDs. We examined the spectroscopic, electronic and structural properties of PBPS, and ascribed to them the improvements observed in the EL characteristics. We also mention the possible future direction of polysilane LED research and other potential optoelectronics applications of polysilanes to the active medium of lasers. Copyright (C) 2000 John Wiley & Sons, Ltd.

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Documento generato il 15/01/21 alle ore 23:11:54