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Titolo:
FABRICATION OF SUBMICRON NB ALOX/NB JOSEPHSON-JUNCTIONS USING ECR PLASMA-ETCHING TECHNIQUE/
Autore:
AOYAGI M; MAEZAWA M; NAKAGAWA H; KUROSAWA I;
Indirizzi:
ELECTROTECH LAB,1-1-4 UMEZONO TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
IEEE transactions on applied superconductivity
fascicolo: 2, volume: 7, anno: 1997,
parte:, 3
pagine: 2644 - 2648
SICI:
1051-8223(1997)7:2<2644:FOSNAJ>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
TUNNEL-JUNCTIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
M. Aoyagi et al., "FABRICATION OF SUBMICRON NB ALOX/NB JOSEPHSON-JUNCTIONS USING ECR PLASMA-ETCHING TECHNIQUE/", IEEE transactions on applied superconductivity, 7(2), 1997, pp. 2644-2648

Abstract

It is important to develop a high-yielding and reproducible fabrication process of submicron Nb/AlOx/Nb Josephson junctions tee improve theintegration level and the operating speed of Josephson LSI circuits. For this purpose, we have developed a junction fabrication process by introducing an electron cyclotron resonance (ECR) plasma, etching technique with CF4 gas. In the ECR plasma etching technique, highly anisotropic etching of Nb was achieved, Over-etching was reduced by 86%. Wt have successfully fabricated Nb/AlOx/Nb junctions with critical current density of 10(4) A/cm(2) using the cross-line patterning (CLIP) method and the electron beam (EB) lithography technique, where the size ofthe junctions was varied from 2 mu m to 0.5 mu m at 0.1 mu m intervals. High-quality submicron junctions far integrated circuits with smallspread of critical current Ic was obtained. High uniformity of He wasachieved. The characteristics of the fabricated junctions are discussed and compared with the junctions fabricated by RIE technique.

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Documento generato il 01/10/20 alle ore 01:07:52