Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Metal organic vapor phase epitaxy of GaAsN/GaAs quantum wells using tertiarybutylhydrazine
Autore:
Schmidtling, T; Klein, M; Pohl, UW; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
Titolo Testata:
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
, volume: 5, anno: 2000, supplemento:, 1
pagine: NIL_197 - NIL_203
SICI:
1092-5783(2000)5:<NIL_197:MOVPEO>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; LAYERS; MOVPE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Schmidtling, T Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6-1,Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Sekr PN 6-1,Hardenbergstr 36 Berlin Germany D-10623
Citazione:
T. Schmidtling et al., "Metal organic vapor phase epitaxy of GaAsN/GaAs quantum wells using tertiarybutylhydrazine", MRS I J N S, 5, 2000, pp. NIL_197-NIL_203

Abstract

GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7% was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growthtemperature of 530 degreesC. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 12:25:52