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Titolo:
Electrical characteristics of pentacene organic thin film transistors withsilicon dioxide gate insulator
Autore:
Choi, JS; Kim, DY; Lee, JH; Kang, DY; Kim, YK; Shin, DM;
Indirizzi:
Hong Ik Univ, Dept Elect & Control Engn, Seoul, South Korea Hong Ik Univ Seoul South Korea Elect & Control Engn, Seoul, South Korea Hong Ik Univ, Dept Appl Sci, Seoul, South Korea Hong Ik Univ Seoul SouthKorea Univ, Dept Appl Sci, Seoul, South Korea Hong Ik Univ, Dept Chem Engn, Seoul, South Korea Hong Ik Univ Seoul South Korea Univ, Dept Chem Engn, Seoul, South Korea
Titolo Testata:
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
, volume: 349, anno: 2000,
pagine: 339 - 342
Fonte:
ISI
Lingua:
ENG
Keywords:
organic thin film transistors; pentacene; evaporation; field-effect mobility; threshold voltage; on-off current ratio;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Choi, JS Hong Ik Univ, Dept Elect & Control Engn, Seoul, South Korea Hong Ik Univ Seoul South Korea ontrol Engn, Seoul, South Korea
Citazione:
J.S. Choi et al., "Electrical characteristics of pentacene organic thin film transistors withsilicon dioxide gate insulator", MOLEC CRYST, 349, 2000, pp. 339-342

Abstract

Pentacene thin-film transistors(TFTS) were fabricated on glass substrates. Aluminum andgold were used for gale and source/drain electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactiveion etching(RIE). The semiconducting pentacene layer was thermally evaporated in vacuum at a pressure of about 10(-8) Torr and a deposition rate of 0.3 Angstrom /sec. The fabricated devices exhibited the field-effect mobility as large as 0.07 cm(2)/V sec, threshold voltage as low as -3.3V, and the on/off current ratio larger than 10(7).

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/10/20 alle ore 00:38:33