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Titolo:
Band structure parameters of compressively strained In0.65Ga0.35As/InGaAsPmultiple quantum wells
Autore:
Lee, KS; Han, WS; Kim, JS; Lee, B;
Indirizzi:
Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Taejon 305600, South Korea Elect & Telecommun Res Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
fascicolo: 5, volume: 37, anno: 2000,
parte:, 1
pagine: 587 - 592
SICI:
0374-4884(200011)37:5<587:BSPOCS>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
EFFECTIVE-MASS; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, KS Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Taejon 305600, South Korea Elect & Telecommun Res Inst Taejon South Korea 305600 outh Korea
Citazione:
K.S. Lee et al., "Band structure parameters of compressively strained In0.65Ga0.35As/InGaAsPmultiple quantum wells", J KOR PHYS, 37(5), 2000, pp. 587-592

Abstract

We have determined the temperature dependence of the bandgap and the carrier effective masses of In0.65Ga0.35As/InGaAsP multiple quantum wells using magnetophotoluminescence spectroscopy. Subband and bandgap calculations based on the deformation-potential theory are in good agreement with the experimental results. The temperature dependence of the bandgap between 4 and 290 K is described by Varshni's equation. Analyzing the magnetic field dependence of the excitonic photoluminescence transition, we obtain the in-plane reduced mass of the heavy-hole exciton as mu = 0.038m(0), which is similar to 80 % larger than the calculated value at the limit of no heavy- and light-hole mixing. Such a considerable mass increase is due to exciton localization at a local potential minimum induced by a fluctuation of the alloy composition.

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Documento generato il 27/11/20 alle ore 16:11:16