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Titolo:
Avalanche photodiodes with an impact-ionization-engineered multiplication region
Autore:
Yuan, P; Wang, S; Sun, X; Zheng, XG; Holmes, AL; Campbell, JC;
Indirizzi:
Multiplex Inc, S Plainfield, NJ 08854 USA Multiplex Inc S Plainfield NJ USA 08854 x Inc, S Plainfield, NJ 08854 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas Austin TX USA 78712 , Microelect Res Ctr, Austin, TX 78712 USA
Titolo Testata:
IEEE PHOTONICS TECHNOLOGY LETTERS
fascicolo: 10, volume: 12, anno: 2000,
pagine: 1370 - 1372
SICI:
1041-1135(200010)12:10<1370:APWAIM>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SHOT-NOISE SUPPRESSION; P(+)-I-N(+) DIODES; MONTE-CARLO; ALXGA1-XAS; GAIN; INP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Yuan, P Multiplex Inc, S Plainfield, NJ 08854 USA Multiplex Inc S Plainfield NJ USA 08854 Plainfield, NJ 08854 USA
Citazione:
P. Yuan et al., "Avalanche photodiodes with an impact-ionization-engineered multiplication region", IEEE PHOTON, 12(10), 2000, pp. 1370-1372

Abstract

In this paper, we demonstrate an impact-ionization-engineered structure for the multiplication region of avalanche photodiodes, By enhancing the control of the impact-ionization position, the structure achieved high gain, low dark current, and very low noise.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 23:06:53