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Titolo:
2 mu m thin film c-Si cells on near-Lambertian Al2O3 substrates
Autore:
Shimokawa, R; Takahashi, T; Takato, H; Ozaki, A; Takano, Y;
Indirizzi:
Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan Sci Univ Tokyo, Noda, Chiba 2780022, Japan Sci Univ Tokyo Noda Chiba Japan 2780022 Tokyo, Noda, Chiba 2780022, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 65, anno: 2001,
pagine: 593 - 598
SICI:
0927-0248(200101)65:1-4<593:2MMTFC>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFUSE REFLECTIVE-SUBSTRATE; OPTICAL CONFINEMENT; SOLAR-CELLS;
Keywords:
solar cells; thin film solar cells; thin film c-Si; alumina ceramics; optical confinement;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Shimokawa, R Electrotech Lab, 1-1-4 Umezono, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab 1-1-4 Umezono Tsukuba Ibaraki Japan 3058568 n
Citazione:
R. Shimokawa et al., "2 mu m thin film c-Si cells on near-Lambertian Al2O3 substrates", SOL EN MAT, 65(1-4), 2001, pp. 593-598

Abstract

Near-Lambertian Al2O3 substrates, which have the reflectivity of almost 100% and superior optical diffusivity, were newly developed by the doctor-blade technique and 2 mum thin film c-Si cells with the large short-circuit current J(SC) of 15.6 mA/cm(2) (photocurrent J(ph),, of 17.5 mA/cm(2)) were fabricated on the substrates. These cells were prepared by ECR plasma chemical vapor deposition, electron-beam recrystallization, conventional phosphorus diffusion and ITO metallization. The optical confinement in such thin film c-Si cells on the diffuse-reflective substrates was experimentally and theoretically investigated. The theoretical computation presented a strong possibility of higher J(SC) beyond 30 mA/cm(2). (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 03/07/20 alle ore 22:41:13