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Titolo:
Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell
Autore:
Nishida, S; Nakagawa, K; Iwane, M; Iwasaki, Y; Ukiyo, N; Mizutani, M; Shoji, T;
Indirizzi:
Canon Inc, Ecol R&D Ctr, Hiratsuka, Kanagawa 2540013, Japan Canon Inc Hiratsuka Kanagawa Japan 2540013 tsuka, Kanagawa 2540013, Japan Canon Inc, Core Technol Dev Headquarters, Hiratsuka, Kanagawa 2540013, Japan Canon Inc Hiratsuka Kanagawa Japan 2540013 tsuka, Kanagawa 2540013, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 65, anno: 2001,
pagine: 525 - 532
SICI:
0927-0248(200101)65:1-4<525:SGULPE>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Keywords:
thin-film crystalline Si; liquid-phase epitaxy; porous Si; separation of Si film;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Nishida, S Canon Inc, Ecol R&D Ctr, 6770 Tamura, Hiratsuka, Kanagawa 2540013, Japan Canon Inc 6770 Tamura Hiratsuka Kanagawa Japan 2540013 3, Japan
Citazione:
S. Nishida et al., "Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell", SOL EN MAT, 65(1-4), 2001, pp. 525-532

Abstract

We have developed a new apparatus for the growth of liquid-phase epitaxy (LPE)-Si films on 5 in Si wafers. We have obtained high growth rates of 0.1-1.0 mum/min and minority-carrier lifetime of average value of 10 muS over the whole of wafer, whereas the thickness uniformity was degraded when rotating the wafers in the solvent. We also demonstrated to growth of LPE-SI films on porous Si layers and to separate the Si films from the porous layers. A9.5% cell was obtained using a LPE-Si film after separation. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 10:51:49