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Titolo:
2D-numerical analysis and optimum design of thin film silicon solar cells
Autore:
Matsui, T; Yamazaki, T; Nagatani, A; Kino, K; Takakura, H; Hamakawa, Y;
Indirizzi:
Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 5608531, Japan Osaka Univ Toyonaka Osaka Japan 5608531 n, Toyonaka, Osaka 5608531, Japan Ritsumeikan Univ, Fac Sci & Engn, Dept Photon, Shiga 5258577, Japan Ritsumeikan Univ Shiga Japan 5258577 , Dept Photon, Shiga 5258577, Japan
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 1-4, volume: 65, anno: 2001,
pagine: 87 - 93
SICI:
0927-0248(200101)65:1-4<87:2AAODO>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Keywords:
device modeling; thin-film poly-Si solar cells; grain boundary;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Matsui, T Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 5608531, Japan Osaka Univ Toyonaka Osaka Japan 5608531 a, Osaka 5608531, Japan
Citazione:
T. Matsui et al., "2D-numerical analysis and optimum design of thin film silicon solar cells", SOL EN MAT, 65(1-4), 2001, pp. 87-93

Abstract

Device modeling for p-i-n junction muc-Si basis thin film polycrystalline Si solar cells has been examined with a simple model of columnar grain structure and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage (V-oc) and curve fill factor (FF) considerably depend on those structural parameters, while short-circuit current density (J(sc)) is comparatively stable by courtesy of homogeneous built-in electric field in the i layer. It has also been found that conversion efficiency over 12% could be expected with 1 mum grain size and well-passivated condition with 3 mum thick i-layer. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 06/04/20 alle ore 08:41:45