Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Step bunching on the vicinal GaN(0001) surface
Autore:
Murty, MVR; Fini, P; Stephenson, GB; Thompson, C; Eastman, JA; Munkholm, A; Auciello, O; Jothilingam, R; DenBaars, SP; Speck, JS;
Indirizzi:
Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 Div Mat Sci, Argonne, IL 60439 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ CalifSanta Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA No Illinois Univ De Kalb IL USA 60115 v, Dept Phys, De Kalb, IL 60115 USA Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 ab, Div Chem, Argonne, IL 60439 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 16, volume: 62, anno: 2000,
pagine: R10661 - R10664
SICI:
0163-1829(20001015)62:16<R10661:SBOTVG>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; FLOW GROWTH; ELECTRICAL-PROPERTIES; GAN; SAPPHIRE; INSTABILITY; SUBSTRATE; MOVPE; EDGE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Jothilingam, R Argonne Natl Lab, Div Mat Sci, 9700 S Cass Ave, Argonne, IL60439 USA Argonne Natl Lab 9700 S Cass Ave Argonne IL USA 60439 9 USA
Citazione:
M.V.R. Murty et al., "Step bunching on the vicinal GaN(0001) surface", PHYS REV B, 62(16), 2000, pp. R10661-R10664

Abstract

Nominally 2 degrees vicinal GaN(0001) surfaces exhibit monolayer-height steps at 990 degreesC in the metal-organic chemical vapor deposition environment. Real-time x-ray scattering observations at 715-990 degreesC indicate that there is a tendency for step bunching during growth. Below 850 degreesC, step bunches nucleated during growth remain and coarsen after growth, while above 850 degreesC, the surface reverts to monolayer-height steps after growth. Surfaces vicinal toward the {1 (1) over bar 00} and the {11 (2) over bar0} planes exhibit similar behavior. We suggest a simple equilibrium surface orientational phase diagram for vicinal GaN(0001) that is consistent with these observations.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 14:22:51