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Titolo:
Formation and dissolution of microcrystalline graphite in carbon-implantedGaN
Autore:
Sun, WH; Wang, ST; Zhang, JC; Chen, KM; Qin, GG; Tong, YZ; Yang, ZJ; Zhang, GY; Pu, YM; Zhang, QL; Li, J; Lin, JY; Jiang, HX;
Indirizzi:
Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R ChinaPeking Univ Beijing Peoples R China 100871 ijing 100871, Peoples R China Renishaw Beijing Off, Beijing 100027, Peoples R China Renishaw Beijing Off Beijing Peoples R China 100027 027, Peoples R China 13th Inst Minist Elect Ind, Shijiazhuang 050051, Peoples R China 13th InstMinist Elect Ind Shijiazhuang Peoples R China 050051 s R China Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA Kansas State Univ Manhattan KS USA 66506 pt Phys, Manhattan, KS 66506 USA
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 10, volume: 88, anno: 2000,
pagine: 5662 - 5665
SICI:
0021-8979(20001115)88:10<5662:FADOMG>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAMAN-SCATTERING; GALLIUM NITRIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Qin, GG Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, PeoplesR China Peking Univ Beijing Peoples R China 100871 0871, Peoples R China
Citazione:
W.H. Sun et al., "Formation and dissolution of microcrystalline graphite in carbon-implantedGaN", J APPL PHYS, 88(10), 2000, pp. 5662-5665

Abstract

Two sharp bands at similar to 1350 and similar to 1600 cm(-1) were observed in the Raman spectra of carbon-implanted GaN after postimplantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. The observation of these two bands indicates the formation of microcrystalline graphite in C-implanted GaN. Hall measurements demonstrated that some dispersed C in GaN acted as acceptors and played a role in reducing electron concentration and Hall mobility. The facts that in 1100 degreesC furnace annealing the intensities of these two Raman peaks decreased rapidly to zero and the resistivity increased by 3 orders of magnitude indicate the dissolution of microcrystalline graphite at this temperature. (C) 2000 American Institute of Physics. [S0021-8979(00)01320-7].

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Documento generato il 30/09/20 alle ore 09:33:46