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Titolo:
Analysis of signal voltage in a semiconductor ring laser gyro
Autore:
Numai, T;
Indirizzi:
Canon Res Ctr, Kanagawa 2430193, Japan Canon Res Ctr Kanagawa Japan 2430193 on Res Ctr, Kanagawa 2430193, Japan
Titolo Testata:
IEEE JOURNAL OF QUANTUM ELECTRONICS
fascicolo: 10, volume: 36, anno: 2000,
pagine: 1161 - 1167
SICI:
0018-9197(200010)36:10<1161:AOSVIA>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Keywords:
gyro; rate equations; Sagnac effect; semiconductor ring laser;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Numai, T Canon Res Ctr, 5-1 Morinosato Wakamiya, Kanagawa 2430193, Japan Canon Res Ctr 5-1 Morinosato Wakamiya Kanagawa Japan 2430193 pan
Citazione:
T. Numai, "Analysis of signal voltage in a semiconductor ring laser gyro", IEEE J Q EL, 36(10), 2000, pp. 1161-1167

Abstract

It is expected that a semiconductor ring laser is useful as a gyro becauseof its tiny size. Here, we: propose to use as signals voltage changes in asemiconductor:ring laser corresponding to rotation. These changes in the voltage during rotation are caused by an interference of clockwise and counterclockwise laser beams inside the ring cavity. In this paper, these signalvoltages are analyzed for the first time by using rate equations. It is shown that the signal voltages saturate-with an increase in the injection current into a semiconductor ring laser if gain saturation is neglected. When gain saturation is considered, there exists an optimum injection current toobtain a signal voltage as large as possible. To confirm validity of this analysis, a signal voltage below laser threshold is compared with that of asemiconductor optical amplifier, and good agreement is obtained.

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Documento generato il 23/09/20 alle ore 12:51:55