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Titolo:
The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes
Autore:
Kotelnikov, EY; Katsnelson, AA; Kudryashov, IV; Rastegaeva, MG; Richter, W; Evtikhiev, VP; Tarasov, IS; Alferov, ZI;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia Univ Jena, D-6900 Jena, Germany Univ Jena Jena Germany D-6900Univ Jena, D-6900 Jena, Germany
Titolo Testata:
SEMICONDUCTORS
fascicolo: 11, volume: 34, anno: 2000,
pagine: 1341 - 1342
SICI:
1063-7826(2000)34:11<1341:TPDGRT>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Kotel'nikov, EY Russian Acad Sci, AF Ioffe Physicotech Inst, Politekhnicheskaya Ul 26, St Petersburg 194021, Russia Russian Acad Sci Politekhnicheskaya Ul 26 St Petersburg Russia 194021
Citazione:
E.Y. Kotel'nikov et al., "The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes", SEMICONDUCT, 34(11), 2000, pp. 1341-1342

Abstract

The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinement with a quantum well were formed by molecular-beam epitaxy. The study of characteristics of laser diodes with a wide contact (100 mum) showed that the power corresponding to the catastrophic degradation of mirrors may attain nearly the highest values ever achieved (20 MW/cm(2)) that were previously obtained for laser diodes based on InGaAsP/GaAs heterostructures alone. (C) 2000 MAIK "Nauka/Interperiodica".

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Documento generato il 26/01/21 alle ore 03:24:05