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Titolo:
The influence of growth interruption on quantum dot laser
Autore:
Wang, H; Wang, HL; Wang, XD; Niu, ZC; Feng, SL;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
JOURNAL OF INFRARED AND MILLIMETER WAVES
fascicolo: 5, volume: 19, anno: 2000,
pagine: 347 - 350
SICI:
1001-9014(200010)19:5<347:TIOGIO>2.0.ZU;2-#
Fonte:
ISI
Lingua:
CHI
Keywords:
self-organized InAs quantum dots; quantum dots laser; growth interruption; band-filling;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Wang, H Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 Peoples R China
Citazione:
H. Wang et al., "The influence of growth interruption on quantum dot laser", J INF M W, 19(5), 2000, pp. 347-350

Abstract

Growth interruption was introduced during the growth of GaAs capping layerof self-organized quantum dots. The comparison of two QD lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature,and weaker temperature dependence of lasing energy.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 09:35:44