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Titolo:
Laser crystallization of silicon for high-performance thin-film transistors
Autore:
Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH;
Indirizzi:
Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany Univ Stuttgart Stuttgart Germany D-70569 ekt, D-70569 Stuttgart, Germany Univ Rennes 1, Grp Microelect & Visualisat, CNRS, UPRESA 6075, F-35042 Rennes, France Univ Rennes 1 Rennes France F-35042 UPRESA 6075, F-35042 Rennes, France
Titolo Testata:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
fascicolo: 10, volume: 15, anno: 2000,
pagine: L31 - L34
SICI:
0268-1242(200010)15:10<L31:LCOSFH>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; EXCIMER-LASER;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Dassow, R Univ Stuttgart, Inst Phys Elekt, Pfaffenwaldring 47, D-70569 Stuttgart, Germany Univ Stuttgart Pfaffenwaldring 47 Stuttgart Germany D-70569 any
Citazione:
R. Dassow et al., "Laser crystallization of silicon for high-performance thin-film transistors", SEMIC SCI T, 15(10), 2000, pp. L31-L34

Abstract

We crystallize amorphous silicon films by a frequency doubled Nd:YVO4 laser with a pulse energy of 18.5 muJ and a repetition frequency of 20 kHz. A sequential lateral solidification process yields polycrystalIine silicon with grains longer than the channel of thin-film transistors. The resulting electron field effect mobility of 410 cm(2) V-1 s(-1) shows the superiority of our process compared with excimer laser crystallization. A calculation results in a possible throughput of 35 cm(2) s(-1) for our laser crystallization process if one used a laser with a pulse energy of 1.25 mJ and a repetition frequency of 100 kHz.

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Documento generato il 25/11/20 alle ore 01:22:48