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Titolo: Laser crystallization of silicon for high-performance thin-film transistors
Autore: Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH;
- Indirizzi:
- Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany Univ Stuttgart Stuttgart Germany D-70569 ekt, D-70569 Stuttgart, Germany Univ Rennes 1, Grp Microelect & Visualisat, CNRS, UPRESA 6075, F-35042 Rennes, France Univ Rennes 1 Rennes France F-35042 UPRESA 6075, F-35042 Rennes, France
- Titolo Testata:
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
fascicolo: 10,
volume: 15,
anno: 2000,
pagine: L31 - L34
- SICI:
- 0268-1242(200010)15:10<L31:LCOSFH>2.0.ZU;2-Q
- Fonte:
- ISI
- Lingua:
- ENG
- Soggetto:
- POLY-SI TFTS; EXCIMER-LASER;
- Tipo documento:
- Letter
- Natura:
- Periodico
- Settore Disciplinare:
- Physical, Chemical & Earth Sciences
- --discip_EC--
- Citazioni:
- 13
- Recensione:
- Indirizzi per estratti:
- Indirizzo: Dassow, R Univ Stuttgart, Inst Phys Elekt, Pfaffenwaldring 47, D-70569 Stuttgart, Germany Univ Stuttgart Pfaffenwaldring 47 Stuttgart Germany D-70569 any
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- Citazione:
- R. Dassow et al., "Laser crystallization of silicon for high-performance thin-film transistors", SEMIC SCI T, 15(10), 2000, pp. L31-L34
Abstract
We crystallize amorphous silicon films by a frequency doubled Nd:YVO4 laser with a pulse energy of 18.5 muJ and a repetition frequency of 20 kHz. A sequential lateral solidification process yields polycrystalIine silicon with grains longer than the channel of thin-film transistors. The resulting electron field effect mobility of 410 cm(2) V-1 s(-1) shows the superiority of our process compared with excimer laser crystallization. A calculation results in a possible throughput of 35 cm(2) s(-1) for our laser crystallization process if one used a laser with a pulse energy of 1.25 mJ and a repetition frequency of 100 kHz.
ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/11/20 alle ore 01:22:48