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Titolo:
Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source
Autore:
Kim, GB; Kwak, JS; Baik, HK; Lee, SM;
Indirizzi:
Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Met Engn, Seoul 120749, South Korea Kangweon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 200701, South Korea Kangweon Natl Univ Chunchon South Korea 200701 nchon 200701, South Korea
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 5, volume: 18, anno: 2000,
pagine: 2576 - 2578
SICI:
1071-1023(200009/10)18:5<2576:CODPUE>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
SYSTEM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, GB Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea Yonsei UnivSeoul South Korea 120749 , Seoul 120749, South Korea
Citazione:
G.B. Kim et al., "Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source", J VAC SCI B, 18(5), 2000, pp. 2576-2578

Abstract

The effect of formation temperature of epitaxial CoSi2 in the Co/Ti/Si system on electrical characteristics of a p(+)n junction diode has been investigated. When the silicide formation temperature was 800 degreesC, a very low reverse leakage current density of 11 nA/cm(2) at a bias of -5 V was obtained. However, when the temperature was 900 degreesC, the reverse leakage current was increased by more than three orders of magnitude. This was attributed to the formation of a Ti-rich phase at the surface by the reaction between the Co-Ti-Si phase and CoSi2 at 900 degreesC. The Ti-rich phase actedas a dopant sink, and suppressed the diffusion of boron to the CoSi2/Si interface. This caused very shallow junction depth with a low boron concentration at the region directly below the Ti-rich phase, followed by generationof a large reverse leakage current. (C) 2000 American Vacuum Society. [S0734-211X(00)01105-7].

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Documento generato il 11/07/20 alle ore 07:53:19