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Titolo:
Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2
Autore:
Kukli, K; Aidla, A; Aarik, J; Schuisky, M; Harsta, A; Ritala, M; Leskela, M;
Indirizzi:
Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia Univ Tartu, Inst Sci Mat, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Sci Mat, EE-51010 Tartu, Estonia Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden
Titolo Testata:
LANGMUIR
fascicolo: 21, volume: 16, anno: 2000,
pagine: 8122 - 8128
SICI:
0743-7463(20001017)16:21<8122:RMIALD>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; ROOM-TEMPERATURE; TITANIUM-DIOXIDE; TANTALUM OXIDE; GAMMA-ALUMINA; GROWTH; RUTILE; SILICA; SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
37
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Tartu, Inst Expt Phys & Technol, TAhe 4, EE-51010 Tartu, Estonia Univ Tartu TAhe 4 Tartu Estonia EE-51010 EE-51010 Tartu, Estonia
Citazione:
K. Kukli et al., "Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2", LANGMUIR, 16(21), 2000, pp. 8122-8128

Abstract

Atomic layer deposition of TiO2 films from alternate pulses of TiI4 and H2O-H2O2 vapors was studied with a quartz crystal microbalance in realtime. The film formation mechanism did not depend remarkably on the time parameters of growth cycles or precursor doses but was dominantly determined by the growth temperature. The reaction of H2O-H2Os with the TiIx-terminated surface was a self-limited process. The adsorption of Tit was not entirely saturative but proceeded via partial decomposition of TiI4, as the adsorbed massincreased continuously during the TiI4 pulse. Changes in the growth mechanism and an increasing contribution of precursor decomposition were observedat temperatures between 200 and 300 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 00:42:47