Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor
Autore:
Bilenca, A; Lasri, J; Eisenstein, G; Ritter, D; Sidorov, V; Cohen, S; Goldgeier, P; Orenstein, M;
Indirizzi:
Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel Technion Israel Inst Technol Haifa Israel IL-32000 L-32000 Haifa, Israel
Titolo Testata:
IEEE PHOTONICS TECHNOLOGY LETTERS
fascicolo: 9, volume: 12, anno: 2000,
pagine: 1240 - 1242
SICI:
1041-1135(200009)12:9<1240:OGAMOM>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
MIXER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Bilenca, A Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel Technion Israel Inst Technol Haifa Israel IL-32000 fa, Israel
Citazione:
A. Bilenca et al., "Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor", IEEE PHOTON, 12(9), 2000, pp. 1240-1242

Abstract

We demonstrate the use of an InP-GaInAs photo heterojunction bipolar transistor as a millimeter wave transducer. A 45-GHz carrier signal is generatedby mixing two optical signals impinging on the optical port at the base. Simultaneously; the base electrode is fed by an electrical signal which modulates the 45 GHz Carrier. Analog modulation capabilities were characterizedin terms of the modulation depth and linearity while digital modulation was evaluated by a measurement of bit error rates.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/11/20 alle ore 11:24:26