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Titolo:
An antifuse EPROM circuitry scheme for field-programmable repair in DRAM
Autore:
Wee, JK; Yang, WW; Ryou, EK; Choi, JS; Ahn, SH; Chung, JY; Kim, SC;
Indirizzi:
Hyundai Elect Co Ltd, Mem Res & Dev, Kyoungkido 467701, South Korea Hyundai Elect Co Ltd Kyoungkido South Korea 467701 o 467701, South Korea Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA Harvard Univ Cambridge MA USA 02138 n & Appl Sci, Cambridge, MA 02138 USA
Titolo Testata:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
fascicolo: 10, volume: 35, anno: 2000,
pagine: 1408 - 1414
SICI:
0018-9200(200010)35:10<1408:AAECSF>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
METAL;
Keywords:
antifuse circuitry; post-package redundancy scheme; high-voltage-tolerant capacitor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Wee, JK Hyundai Elect Co Ltd, Mem Res & Dev, Kyoungkido 467701, South Korea Hyundai Elect Co Ltd Kyoungkido South Korea 467701 , South Korea
Citazione:
J.K. Wee et al., "An antifuse EPROM circuitry scheme for field-programmable repair in DRAM", IEEE J SOLI, 35(10), 2000, pp. 1408-1414

Abstract

An antifuse EPROM and 3-V programming circuit as been demonstrated in an existing 0.22-mu m DRAM process technology and is fully compatible with 64-Mb SDRAM specifications, The antifuse circuitry uses an internal high-voltage generator for programming and a dynamic sense and static latch scheme that appropriately enables redundant DRAM address decoders at power-up. For efficient high voltage generation, a high-voltage-tolerant capacitor structure was formed by using the high fringing capacitance available between intralevel and interlevel polysilicon and metal lines. Furthermore, the programmable EPROM element was realized without any process modifications by utilizing destructive dielectric breakdown of the thin, highly reliable oxide-nitride-oxide (ONO) dielectric in the basic DRAM cell capacitor structure. This antifuse EPROM circuit enables implementation of field-programmable DRAM features such as memory repair, output impedance matching, and data encryption.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/01/20 alle ore 06:25:45