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Titolo:
Ultrashallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping
Autore:
Thompson, PE; Bennett, J;
Indirizzi:
USN, Res Lab, Washington, DC 20375 USA USN Washington DC USA 20375USN, Res Lab, Washington, DC 20375 USA SEMATECH, Austin, TX 78741 USA SEMATECH Austin TX USA 78741SEMATECH, Austin, TX 78741 USA
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 16, volume: 77, anno: 2000,
pagine: 2569 - 2571
SICI:
0003-6951(20001016)77:16<2569:UJISFB>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI; SI(100); GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Thompson, PE USN, Res Lab, Code 6812, Washington, DC 20375 USA USN Code 6812 Washington DC USA 20375 ashington, DC 20375 USA
Citazione:
P.E. Thompson e J. Bennett, "Ultrashallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping", APPL PHYS L, 77(16), 2000, pp. 2569-2571

Abstract

Low-temperature molecular-beam epitaxy was used to form highly conductive,ultrashallow layers in silicon using boron delta doping. Junction depths, determined with secondary ion mass spectrometry, ranged from 7 to 18 nm. A minimum resistivity of 3x10(-4) Omega cm was obtained when the delta-doped layers were spaced 2.5 nm apart. The sheet resistances of the epitaxial layers, plotted as a function of junction depth, followed the theoretical curve for a box-doped layer having a boron doping concentration equal to the solid solubility limit, 6x10(20)/cm(3). At a specific thickness, the minimum sheet resistance obtained by B delta doping was more than a factor of 5 less than that achieved by ion implantation. (C) 2000 American Institute of Physics. [S0003-6951(00)05342-0].

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Documento generato il 20/01/21 alle ore 03:05:39