Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films
Autore:
Seo, JW; Akiyama, S; Aya, Y; Nohda, T; Hamada, H; Kajiyama, K; Kanaya, M; Kuwano, H;
Indirizzi:
Keio Univ, Fac Sci & Technol, Dept Elect Engn, Yokohama, Kanagawa 2238522,Japan Keio Univ Yokohama Kanagawa Japan 2238522 okohama, Kanagawa 2238522,Japan Sanyo Elect Co Ltd, Microelect Res Cent, Gifu 5030195, Japan Sanyo Elect Co Ltd Gifu Japan 5030195 lect Res Cent, Gifu 5030195, Japan Ion Engn Res Inst Co, Hirakata, Osaka 5730128, Japan Ion Engn Res Inst CoHirakata Osaka Japan 5730128 a, Osaka 5730128, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9A, volume: 39, anno: 2000,
pagine: 5063 - 5068
SICI:
0021-4922(200009)39:9A<5063:LSRFTC>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI FILMS; POLYCRYSTALLINE SILICON; CRYSTALLIZATION; DEVICES; GROWTH;
Keywords:
excimer laser annealing; lateral solid-phase recrystallization; crystal seed; Ge-ion implantation; grain boundary;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Seo, JW Keio Univ, Fac Sci & Technol, Dept Elect Engn, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan Keio Univ 3-14-1 Hiyoshi Yokohama Kanagawa Japan 2238522 22, Japan
Citazione:
J.W. Seo et al., "Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films", JPN J A P 1, 39(9A), 2000, pp. 5063-5068

Abstract

A new recrystallization method improving the electrical properties of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and reducing thefluctuation of the electrical characteristics among them is proposed. It can he realized by the amorphization of poly-Si films through Ge-ion implantation, the crystallization of the drain region, which functions as a crystal seed in the subsequent process, through excimer laser annealing (ELA), and lateral solid-phase recrystallization (LSPR) from the drain to the sourcealong the channel through furnace annealing, In this study, basic experiments are performed to determine the optimum condition of ELA for the formation of the crystal seed with good crystallinty and to investigate the aspectof LSPR growth from the seed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 13:54:00