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Titolo:
Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model
Autore:
Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS;
Indirizzi:
Stanford Univ, Solid State Elect Lab, Stanford, CA 94305 USA Stanford Univ Stanford CA USA 94305 ate Elect Lab, Stanford, CA 94305 USA Matsushita Elect Corp, Semicond Co, Semicond Device Res Str, Takatsuki, Osaka 5691193, Japan Matsushita Elect Corp Takatsuki Osaka Japan 5691193 Osaka 5691193, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9A, volume: 39, anno: 2000,
pagine: 5057 - 5062
SICI:
0021-4922(200009)39:9A<5057:AOUTRI>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
MIXING REGION; INGAN; GAN; IMMISCIBILITY; GAINN; ALN; INN;
Keywords:
group-III nitride; compositional immiscibility; phase separation; interaction parameter; unstable two-phase region; free energy of mixing; spinodal composition; valence force field model; critical temperature;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Takayama, T Stanford Univ, Solid State Elect Lab, CIS-X329, Stanford, CA 94305 USA Stanford Univ CIS-X329 Stanford CA USA 94305 ord, CA 94305 USA
Citazione:
T. Takayama et al., "Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model", JPN J A P 1, 39(9A), 2000, pp. 5057-5062

Abstract

The Group III-nitride ternary system is studied with respect to an unstable two-phase region in the phase field. The unstable two-phase region is analyzed using a strictly regular solution model. The interaction parameter used in the analysis is obtained from a strain energy calculation using the valence force field model, modified for both wurtzite and zinc-blende structures to avoid overestimation of the strain energy. The structural deviationfrom an ideal wurtzite structure in InN, GaN, and AlN is also taken into account in out model. According to the calculated results of the interactionparameters, the critical temperature for wurtzite InGaN, InAlN, and GaAlN are found to be 1967 K, 3399 K, and 181 K, respectively. This suggests that, at a typical growth temperature of 800-1000 degrees C a wide unstable two-phase region exists in both InGaN and InAlN. In order to show the validityof our calculation results, we compare the calculated results and the experimental results using the calculation of the interaction parameter for theInGaAs system. The calculated results agree well with the experimental results.

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Documento generato il 02/07/20 alle ore 19:16:28